发明名称 |
Grabenisolationsprozesse unter Verwendung einer Polysilizium-unterstützten Füllung |
摘要 |
Disclosed is a method of simultaneously supplying trench isolations for array and support areas of a semiconductor substrate made of a substrate material, the method comprising providing a first hard mask layer for the array and support areas, said first hard mask comprising mask openings defining trench isolations in the array and support areas, providing deep array trench isolations in the array areas, providing a blanketing planarized conductive material layer over both support and array areas sufficient to fill said mask openings and deep array trench isolations, etching said conductive material through said first hard mask material down into said semiconductor substrate so as to form support trench isolations, such that both deep array trench isolations and support trench isolations are of equal depth, and wherein a conductive element, comprising a quantity of said conductive material, remains in the bottom of each of said deep array trenches. |
申请公布号 |
DE10307822(B4) |
申请公布日期 |
2005.08.18 |
申请号 |
DE2003107822 |
申请日期 |
2003.02.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP., ARMONK;INFINEON TECHNOLOGIES AG |
发明人 |
KNORR, ANDREAS;DIVAKARUNI, RAMACHANDRA;BEINTNER, JOCHEN;MANDELMAN, JACK |
分类号 |
H01L21/762;H01L21/763;H01L21/8239;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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