发明名称 |
Method of fabricating a light emitting device |
摘要 |
There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted. |
申请公布号 |
US2005181551(A1) |
申请公布日期 |
2005.08.18 |
申请号 |
US20050088184 |
申请日期 |
2005.03.24 |
申请人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;ONO KOJI;TAKAYAMA TORU |
发明人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;ONO KOJI;TAKAYAMA TORU |
分类号 |
H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/423;H01L29/49;H01L29/786;H01L51/52;(IPC1-7):H01L21/00;H01J1/62;H01J63/04 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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