III-V SEMICONDUCTOR LASER DIODE

摘要

PROBLEM TO BE SOLVED: To provide a single or coupling quantum well laser diode having a high gain and a low threshold current. SOLUTION: A pair of undoped spacer layers are provided contiguously to a single quantum well aluminium nitride gallium active region or in the vicinity thereof. In various illustrative embodiments, an undoped spacer layer is provided between a single quantum well aluminium nitride gallium active region and a carrier confinement layer. The undoped spacer layer reduces the threshold current level of a laser and improves the output characteristics thereof. COPYRIGHT: (C)2005,JPO&NCIPI