发明名称 Image sensor and method for fabricating the same
摘要 Image sensor and method for fabricating the same are disclosed, wherein, instead of a traditional microlens array over a color filter array, a microlens pattern is arranged under the color filter array, which can permit shortening a total travel distance of a converged light to the photodiode, improve intensity and focus of the light finally reaching the photodiode array, and improve a low luminance performance of the image sensor. The minimized travel distance of the converged light, which optimizes intensity and focus of the light reaching the photodiode array, permits significantly improving an image quality reproduced by the image sensor.
申请公布号 US2005139945(A1) 申请公布日期 2005.06.30
申请号 US20040026903 申请日期 2004.12.29
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 LIM KEUN H.
分类号 H01L27/14;G02B3/00;H01L21/00;H01L27/146;H01L31/00;H01L31/0232;H01L31/10;H04N1/46;H04N5/335;H04N5/369;(IPC1-7):H01L21/00;H01L31/023 主分类号 H01L27/14
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