发明名称 |
Semiconductor device with modified mobility and thin film transistor having the same |
摘要 |
Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.
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申请公布号 |
US2005139923(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040022756 |
申请日期 |
2004.12.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON JANG-YEON;NOGUCHI TAKASHI;PARK YOUNG-SOO;KIM DO-YOUNG |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L29/04;H01L29/10;H01L29/786;(IPC1-7):H01L29/04;H01L31/036;H01L21/00;H01L27/12 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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