发明名称 Semiconductor device with modified mobility and thin film transistor having the same
摘要 Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.
申请公布号 US2005139923(A1) 申请公布日期 2005.06.30
申请号 US20040022756 申请日期 2004.12.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON JANG-YEON;NOGUCHI TAKASHI;PARK YOUNG-SOO;KIM DO-YOUNG
分类号 H01L21/20;H01L21/336;H01L21/77;H01L29/04;H01L29/10;H01L29/786;(IPC1-7):H01L29/04;H01L31/036;H01L21/00;H01L27/12 主分类号 H01L21/20
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