发明名称 |
Positive resist composition and patterning process |
摘要 |
A positive resist composition contains a novolak resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl ester groups, a methyl vinyl ether-monoalkyl maleate copolymer and optionally, an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate. The composition is useful as a thick film photoresist which is subject to a plating step and offers many advantages including high sensitivity, perpendicular geometry, high resolution, and crack resistance during and after the plating step.
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申请公布号 |
US6911292(B2) |
申请公布日期 |
2005.06.28 |
申请号 |
US20030737788 |
申请日期 |
2003.12.18 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
FURIHATA TOMOYOSHI;KATO HIDETO |
分类号 |
C08F222/02;C08G8/28;G03F7/023;G03F7/033;G03F7/40;H01L21/027;H05K3/18;H05K3/24;(IPC1-7):G03F7/023;G03F7/30 |
主分类号 |
C08F222/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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