发明名称 Positive resist composition and patterning process
摘要 A positive resist composition contains a novolak resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl ester groups, a methyl vinyl ether-monoalkyl maleate copolymer and optionally, an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate. The composition is useful as a thick film photoresist which is subject to a plating step and offers many advantages including high sensitivity, perpendicular geometry, high resolution, and crack resistance during and after the plating step.
申请公布号 US6911292(B2) 申请公布日期 2005.06.28
申请号 US20030737788 申请日期 2003.12.18
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 FURIHATA TOMOYOSHI;KATO HIDETO
分类号 C08F222/02;C08G8/28;G03F7/023;G03F7/033;G03F7/40;H01L21/027;H05K3/18;H05K3/24;(IPC1-7):G03F7/023;G03F7/30 主分类号 C08F222/02
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