| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an integral photovoltaic device of a reverse type in which pattern processing can be facilitated. <P>SOLUTION: In the photovoltaic device, a plurality of photovoltaic conversion elements of a first electrode layer, a photovoltaic conversion layer made of a thin film semiconductor, and a second electrode layer, are provided on a substrate 1 having a first insulating layer 2 thereon; and the plurality of photovoltaic conversion elements are connected in series on the substrate. In a region between the adjacent photovoltaic conversion elements, a zone of the first insulating layer 2 opposed to the substrate 1 having a removed surface and a first conductive layer 3 thicker than the photovoltaic conversion layer are located adjacent to the zone and between the first insulating layer 2 and the first electrode. A zone of the first conductive layer 3 opposed to the substrate 1, a second insulating layer 5 located in the zone having the removed surface, and a second conductive layer 6 including a part on the second insulating layer 5 and extended from the surface-removed zone of the first conductive layer 3 onto the second electrode layer of the adjacent photovoltaic conversion elements having the second insulating layer 5 disposed therebetween are provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
