METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device is provided to reduce largely defects of the semiconductor device by restraining a lifting phenomenon of a hard mask in a cleaning process. A plurality of conductive patterns are formed on a substrate(80). An etch stop layer(85) is formed along a profile of the conductive patterns. An interlayer dielectric(86) is formed on the entire surface of the substrate. A material layer for hard mask is formed on the interlayer dielectric. A photoresist pattern is formed on the material layer. A hard mask(87a) is formed by etching selectively the material layer for the hard mask. The photoresist pattern is removed therefrom. A contact hole for exposing the etch stop layer is formed by etching the etch stop layer. The substrate is exposed by removing the etch stop layer from a bottom face of the contact hole. A sacrificial layer is formed on the conductive patterns along a topology of the contact hole. The hard mask layer is removed by a blanket etch process. The sacrificial layer is removed selectively therefrom. The inside of the contact hole is cleaned.