METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH CAPACITOR TO STABILIZE SUBSEQUENT PROCESS AND IMPROVE CHARACTERISTIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device with a capacitor is provided to stabilize a subsequent process and improve a characteristic of a semiconductor device by eliminating the polymer generated in forming a lower electrode layer and an insulation layer for a capacitor by a three-step plasma process. CONSTITUTION: A lower metal layer, an insulation layer and an upper metal layer are sequentially deposited on a semiconductor substrate(S200). After a photoresist pattern is formed on the upper metal layer, the upper metal layer and the insulation layer are etched according to the photoresist pattern to remove the polymer generated in forming the upper electrode layer and an insulation layer for a capacitor. The photoresist pattern is removed by using O2/N2 plasma(S206). The polymer existing on the lower metal layer is eliminated by using H2O/CF4 plasma(S208).