METHOD OF FORMING GATE SPACER IN SEMICONDUCTOR FOR PREVENTING DAMAGE OF SILICON SUBSTRATE

摘要

PURPOSE: A method of forming a gate spacer in a semiconductor is provided to prevent damage of a silicon substrate by controlling the etching selectivity of a silicon oxide layer and a silicon nitride layer to form a silicon nitride spacer. CONSTITUTION: A gate polysilicon layer is deposited on an upper surface of a gate oxide layer. An LP-TEOS(LP-Tetra Ethyl Ortho Silicate) is formed on an upper surface of the gate polysilicon layer. A spacer silicon nitride layer is formed on the LP-TEOS. A spacer is formed by etching the deposited spacer silicon nitride layer by an etching process using a sidewall TEOS and a mixed gas. The spacer silicon nitride layer has a thickness of 700 to 1200 angstrom.