| 摘要 |
PURPOSE: A non-volatile ferroelectric memory device is provided to perform a repair process without having additional redundancy cells only by merging memory blocks in a non-volatile ferroelectric memory device of a multi bitline structure. CONSTITUTION: A non-volatile ferroelectric memory device includes a main bitline and a plurality of sub bitlines selectively connected to the main bitline. The non-volatile ferroelectric memory device further includes a cell array of a multi bitline structure that converts the sensing voltage of the sub bitline into a current to induce a sensing voltage in the main bitline. A least one of the first cell block outputs a sensing voltage of an abnormal state when a fail occurs, having the cell array. At least one of the second cell block operates in the same way as the first cell block to output a sensing voltage of a normal state, having the cell array and sharing the same data bus line with the first cell block. A column select control part(20) outputs a column select signal to apply the sensing voltages of the first and second cell blocks to the shared data bus according to a fail block signal.
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