METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE TO REDUCE VIA CONTACT RESISTANCE IN VIA-CONTACT PROCESS

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to prevent deterioration and reduce the via contact resistance by forming an anti-reflective coating with a W-containing thin film instead of a TiN thin film. CONSTITUTION: A first metal layer(53) is formed on a semiconductor substrate(51) having a predetermined structure. An anti-reflective coating including W is formed on an upper surface of the first metal layer. A first metal line is formed by performing an etch process using a first metal line mask. The first metal layer is formed with aluminum alloy.