Bipolar transistor manufacturing method for use in integrated circuit, involves forming sacrificial block acting as window to emitter, on encapsulation layer laid on base layer, and laying sacrificial layer on base contact layer

摘要

The method involves forming a sacrificial block acting as a window to emitter, on an encapsulation layer laid on a base layer (2). A sacrificial layer is laid on a base contact layer (7). Sum of thicknesses of the layer (7) and the sacrificial layer is equal to that of the encapsulation layer and block. The block and encapsulation layer are removed and an emitter layer (9) is laid. The sacrificial layer is removed. The sacrificial block is formed at a level of a base-emitter junction.