| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing electrooptic device by which the occurrence of a defective electrooptic device caused by an HF defect can be prevented even when the HF defect occurs in the semiconductor layer of an SOI substrate. SOLUTION: In this method of manufacturing electrooptic device, a step of forming an silicon oxide film 116 on a single-crystal silicon film 112 formed on a supporting substrate 110 by the film forming method, a step of flattening the silicon oxide film 116, and a step of sacrificially oxidizing the single-crystal silicon film 112 from the side of the flattened silicon film 116, are performed at the time of reducing the thickness of the single-crystal silicon film 112. COPYRIGHT: (C)2005,JPO&NCIPI |
