PROCESS FOR FABRICATING CAPACITOR, MEMORY, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a capacitor in which lattice mismatch is suppressed between an electrode and a ferroelectric layer. SOLUTION: The process for fabricating a capacitor 200 having a lower electrode 210 and a ferroelectric layer 230 comprises a metal layer forming step for forming the lower electrode 210, a step for forming a buffer layer 220 having a lattice constant between those of the lower electrode 210 and the ferroelectric layer 230 and exhibiting ferroelectric characteristics on the lower electrode 210, and a step for forming the ferroelectric layer 230 on the buffer layer 220. COPYRIGHT: (C)2005,JPO&NCIPI