| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a memory device (memory circuit). SOLUTION: The word lines and bit lines are connected to the memory cells. And in the memory circuit in which the data lines are connected to the bit lines through the gate to pass the signal, a compensation circuit is provided to pass the current between the above bit lines and the data lines in the direction reverse to the leakage current generated in the above gate. COPYRIGHT: (C)2005,JPO&NCIPI
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