| 摘要 |
PROBLEM TO BE SOLVED: To provide method and equipment for measuring the work function in which the work function of a conductive film can be measured easily and quickly. SOLUTION: In the method for measuring the work functionϕ<SB>m</SB>of a mid-gap material 52 formed on an Si wafer 51, SiO<SB>2</SB>33 of a measuring probe 30 comprising an Si chip 31 and the SiO<SB>2</SB>33 provided on the Si chip 31 is opposed to the mid-gap material 52 on the Si wafer 51 and brought into contact with each other thus forming a capacitor having an air gap part 35 between the Si chip 31 and the mid-gap material 52. C-V characteristics of that capacitor are then measured and the work function of the mid-gap material 52 is calculated from the measurements of the C-V characteristics. COPYRIGHT: (C)2004,JPO&NCIPI
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