发明名称 |
MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD FOR MANUFACTURING THE SAME, IN WHICH A BOTTOM ELECTRODE IS IMPROVED |
摘要 |
PURPOSE: A magnetic tunnel junction device and a method for manufacturing the same are provided to remove the requirement for the seed layer formed between the lower electrode and the pinning layer. CONSTITUTION: A magnetic tunnel junction device includes a bottom electrode(69), a pinning layer pattern(71), a pinned layer pattern(73), a tunneling layer pattern(75), a free layer pattern(77), a capping layer pattern(79) and a top electrode(81). The magnetic tunnel junction device is characterized in that the bottom electrode(69) has a root mean square(RMS) surface roughness is less than 5Å.
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申请公布号 |
KR20040078869(A) |
申请公布日期 |
2004.09.13 |
申请号 |
KR20030034186 |
申请日期 |
2003.05.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HYEON JO;LEE, GYU MAN;PARK, JEONG HUI |
分类号 |
H01L27/105;G11C11/14;G11C11/15;H01L21/8234;H01L21/8244;H01L21/8246;H01L27/22;H01L43/08;H01L43/10;H01L43/12;(IPC1-7):G11C11/15 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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