发明名称 |
Semiconductor integrated circuit device with reduced coupling noise |
摘要 |
To a first signal line to which a signal with a comparable small amplitude against the power supply voltage is transmitted at a first timing, a second signal line to which a voltage maintained at a constant is transmitted at the first timing is laid out on the same wiring layer as that of the first signal line adjacently to each other. Thereby, the invention reduces the coupling noises without impairing a high density of the signal wirings, and provides a semiconductor integrated circuit device with a memory circuit that realizes a high integration, low power consumption, and high speed.
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申请公布号 |
US6788561(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20020135505 |
申请日期 |
2002.05.01 |
申请人 |
RENESAS TECHNOLOGY CORP.;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
WATANABE NORIYOSHI;OGURA KAZUTOMO;FUNANE KIYOTADA |
分类号 |
G11C11/41;G11C7/06;G11C11/419;H01L21/8244;H01L23/522;H01L27/11;(IPC1-7):G11C5/06 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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