发明名称 |
Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers |
摘要 |
A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.
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申请公布号 |
US6776696(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20020281905 |
申请日期 |
2002.10.28 |
申请人 |
PLANAR SOLUTIONS LLC |
发明人 |
MAHULIKAR DEEPAK;JENKINS RICHARD J. |
分类号 |
B24B37/04;C09G1/02;H01L21/321;(IPC1-7):B24B1/00 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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