METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO AVOID CRACK IN SEMICONDUCTOR WAFER IN SINGLE-WAFER-TYPE RTP APPARATUS

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent a semiconductor wafer from being separated from a stage of a single-wafer-type RTP(rapid thermal process) apparatus and avoid a crack in the semiconductor wafer by reducing the number of rotations of the semiconductor wafer to 100 rpm(revolution per minute) or lower in a heating process in which the temperature of the semiconductor wafer is not greater than 500 deg.C and an open loop control is performed on the semiconductor wafer. CONSTITUTION: An open loop control is performed in the heating process in which the temperature of the semiconductor wafer is relatively low, and a close loop control is performed in a heating process and a main treatment process in which the temperature of the semiconductor wafer is relatively high. The semiconductor wafer is revolved at a relatively low number of rotations in the open loop control process, and the semiconductor wafer is revolved at a relatively high number of rotations in the close loop control process.