发明名称 METHOD FOR MANUFACTURING POLYIMIDE SUBSTRATE HAVING LOW DIELECTRIC CONSTANT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a low dielectric constant polyimide substrate having high heat resistance which maintains the character of a high heat resistant polyimide film, and also in which a low dielectric constant fluororesin film is laminated to a polyimide film substrate with a large peel strength. <P>SOLUTION: The method for manufacturing the low dielectric constant polyimide substrate is to laminate a thermo-compression bonding multi-layer polyimide film including a thermo-compression bonding aromatic polyimide layer having a thickness of 0.5μm or more and a thickness of 50% or less of an entire polyimide layer to at least one side of a high heat resistant aromatic polyimide layer, and a fluororesin film by heating and pressurizing through a thermo-compression bonding aromatic polyimide layer surface which is carried out vacuum plasma discharge treatment under the presence of an organic fluorocompound; and is to have a peel strength of 0.8 kg/cm or more by that the thermo-compression bonding multi-layer polyimide film and the fluororesin film are laminated by heating and pressurizing through the thermo-compression bonding aromatic polyimide layer surface which is subjected to the vacuum plasma discharge treatment. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004216830(A) 申请公布日期 2004.08.05
申请号 JP20030009978 申请日期 2003.01.17
申请人 UBE IND LTD 发明人 KATSUKI SHOZO
分类号 B32B27/30;B32B15/08;B32B15/082;B32B15/088;B32B27/34;B32B37/00;H05K1/03;(IPC1-7):B32B27/30;B32B31/22 主分类号 B32B27/30
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