| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for pulling a silicon single crystal by applying horizontal magnetic field which realizes low-oxygen concentration in the silicon single crystal. SOLUTION: A method wherein the silicon single crystal is pulled while applying horizontal magnetic field to a silicon melt prepared by melting polysilicon filled in a quartz crucible by a heater, is improved. A relative flow rate, defined as a value obtained by dividing an inert gas flow rate (unit [L/min]) by a furnace pressure (unit [Torr]), is controlled to≤1.0. The center of the horizontal magnetic field is moved along with the change in the liquid level of the silicon melt. A rate of change in crystal length is adjusted while keeping a relative flow rate range of≤1.0 according to the distribution of oxygen concentration in the growth axis direction of the silicon single crystal being pulled. In the depth direction of the silicon melt, the center of the horizontal magnetic field is adjusted to a position with the lowest oxygen concentration between the center of the melt to the vicinity of the liquid level. COPYRIGHT: (C)2004,JPO&NCIPI
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