发明名称 |
Fully-depleted (FD) (SOI) MOSFET access transistor and method of fabrication |
摘要 |
A fully-depleted (FD) Silicon-on-Insulator (SOI) MOSFET access transistor comprising a gate electrode of a conductivity type which is opposite the conductivity type of the source/drain regions and a method of fabrication are disclosed.
|
申请公布号 |
US2004135204(A1) |
申请公布日期 |
2004.07.15 |
申请号 |
US20040751443 |
申请日期 |
2004.01.06 |
申请人 |
WANG HONGMEI;ZAHURAK JOHN K. |
发明人 |
WANG HONGMEI;ZAHURAK JOHN K. |
分类号 |
H01L21/8242;H01L21/84;H01L27/108;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|