| 摘要 |
PURPOSE: A method for manufacturing a transistor is provided to remove devoit of STI(Shallow Trench Isolation) by previously forming a gate, a source and a drain before forming the STI. CONSTITUTION: A gate oxide layer(2) and a gate electrode(3) are sequentially formed on a silicon substrate(1). An LDD region(5) is formed in the substrate. A spacer(6) is formed at both sidewalls of the gate electrode, and a source(7a) and a drain(7b) are formed in the substrate. A nitride layer(8) and the first planarized insulating layer(9) are formed on the resultant structure. A trench is then formed. The second planarized insulating layer(12) is formed on the resultant structure including the trench. By selectively etching the second and first insulating layer, holes are formed. Then, a gate plug(13a), a source plug(13b) and a drain plug(13c) are formed in the holes.
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