| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to eliminate the impurities remaining inside each layer(or a film) by performing a remote plasma treatment process after a copper seed layer, a copper thin film or a high dielectric oxide layer is deposited. CONSTITUTION: The high dielectric oxide layer is formed on a semiconductor substrate(11) having a predetermined structure. A remote plasma treatment process is performed on the high dielectric oxide layer. The high dielectric oxide layer is one of AlxOy layer, a ZrOx layer or a HfOx layer.
|
