WRITING TO A MRAM ELEMENT COMPRISING A SYNTHETIC ANTIFERROMAGNETIC LAYER,申请号KR20047006280-传众专利搜索

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发明名称	WRITING TO A MRAM ELEMENT COMPRISING A SYNTHETIC ANTIFERROMAGNETIC LAYER
摘要
申请公布号	KR20040058244(A)	申请公布日期	2004.07.03
申请号	KR20047006280	申请日期	2002.09.24
申请人		发明人
分类号	G11C11/15;G11C7/00;G11C11/00;G11C11/16	主分类号	G11C11/15
代理机构		代理人
主权项
地址

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