| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a voltage driving element driving circuit that can prevent the puncture of a transistor provided for controlling the rate of the current change of a voltage driving element. <P>SOLUTION: The voltage driving element driving circuit that is provided with a PNP transistor Q12 whose emitter terminal is connected to the gate of an IGBT (Q11) that drives a load L11 via a resistor R11 and whose collector terminal is grounded, controls the rate of the current change when turned off by discharging the gate charge of the IGBT via the transistor and resistor. One end of a capacitor side in a series circuit of a capacitor C11 and a diode D11 is connected to the collector of the IGBT, and the other end at the diode side to the base of the PNP transistor Q12. A pull-down resistor R15 is connected between the connection point of the capacitor and the diode and ground. The diode D11 is connected in such polarity that causes a current to flow in the direction from the capacitor C11 to the base of the transistor. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
