发明名称 |
OVERCOAT COMPOSITION FOR PHOTORESIST |
摘要 |
PURPOSE: An overcoat composition for a photoresist is provided to prevent the CD difference generated between the center and the edge of the wafer in a patterning process using a chemically amplified photoresist. CONSTITUTION: The overcoat composition for a photoresist comprises a compound represented by formula 1, wherein R1 is hydrogen or methyl group, R1 and R2 is hydrogen or C1-C3 alkyl group. The overcoat composition is applied onto the upper side of the photoresist film, and the resultant is exposed to the light, baked and developed to obtain a desired photoresist pattern.
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申请公布号 |
KR20040047172(A) |
申请公布日期 |
2004.06.05 |
申请号 |
KR20020075289 |
申请日期 |
2002.11.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HWANG, YEONG SEON;JUNG, JAE CHANG;KIM, SAM YEONG |
分类号 |
G03F7/004;G03F7/039;G03F7/11;G03F7/38;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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