发明名称 OVERCOAT COMPOSITION FOR PHOTORESIST
摘要 PURPOSE: An overcoat composition for a photoresist is provided to prevent the CD difference generated between the center and the edge of the wafer in a patterning process using a chemically amplified photoresist. CONSTITUTION: The overcoat composition for a photoresist comprises a compound represented by formula 1, wherein R1 is hydrogen or methyl group, R1 and R2 is hydrogen or C1-C3 alkyl group. The overcoat composition is applied onto the upper side of the photoresist film, and the resultant is exposed to the light, baked and developed to obtain a desired photoresist pattern.
申请公布号 KR20040047172(A) 申请公布日期 2004.06.05
申请号 KR20020075289 申请日期 2002.11.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG, YEONG SEON;JUNG, JAE CHANG;KIM, SAM YEONG
分类号 G03F7/004;G03F7/039;G03F7/11;G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/004
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