| 发明名称 |
NON-VOLATILE MEMORY DEVICE |
| 摘要 |
In a non-volatile memory device (10) comprising an electrically polarizable dielectric memory material (11) with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence, wherein the memory material (11) comprises one or more polymers, at least one of these polymers is a deuterated polymer. |
| 申请公布号 |
EP1423856(A1) |
申请公布日期 |
2004.06.02 |
| 申请号 |
EP20020755997 |
申请日期 |
2002.08.28 |
| 申请人 |
THIN FILM ELECTRONICS ASA |
发明人 |
GUDESEN, HANS, GUDE;NORDAL, PER-ERIK |
| 分类号 |
G01C11/22;G11C11/22;H01L21/8246;H01L27/105;H01L27/115;H01L27/28;H01L51/05;(IPC1-7):G11C11/22;C08L27/16 |
主分类号 |
G01C11/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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