| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To properly and efficiently clean a mask on which a fine pattern is formed. <P>SOLUTION: The cleaning/inspecting apparatus is equipped with a chamber 6 where a mask for exposure is housed, evacuating means 20, 22 to reduce the inner pressure of the chamber, radical supplying means 8, 9 to supply radicals which react with the depositing material on the mask 14 into the chamber, electron beam irradiating means 3, 4 to irradiate the mask 14 in the chamber with electron beams, secondary electron detecting means 7 to observe secondary electrons 16 emitting from the mask by the electron beam irradiation, line width measuring means 1, 2 to measure the line width of the pattern from the image of secondary electrons, and calculating means to calculate the amount of the depositing material on the mask from the measurement of the line width. Thereby, a process of volatilizing the depositing material by supplying radicals and a process of recognizing the pattern by irradiation of electron beams are carried out in one apparatus. This results in that a step of carrying a mask between apparatuses of a cleaning apparatus and an inspecting apparatus, or step of adjusting the atmosphere in the apparatus at each time of conveying the object into the apparatus are made unnecessary and that cleaning can be carried out while checking the effect of cleaning. <P>COPYRIGHT: (C)2004,JPO</p> |
