发明名称 |
LOW-DIELECTRIC-CONSTANT MATERIAL, AND MANUFACTURING METHOD THEREOF |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To disclose low-dielectric-constant materials, the improvements of the performances of the films including the same materials, and the manufacturing methods thereof when they are used as interlayer dielectrics in integrated circuits. <P>SOLUTION: These materials are characterized in that their dielectric constants (k) are equal to or smaller than about 3.7, and the standardized wall elastic moduluses (E<SB>0</SB>') are equal to or larger than about 15 GPa which are derived partially from the dielectric constants of the foregoing materials, and their metal-impurity levels are equal to or smaller than 500 ppm. Also, there are given low-dielectric-constant materials having dielectric constants smaller than about 1.95 and having standardized wall elastic moduluses (E<SB>0</SB>') larger than about 26 GPa which are derived partially from the dielectric constants of the foregoing materials. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2004134738(A) |
申请公布日期 |
2004.04.30 |
申请号 |
JP20030155020 |
申请日期 |
2003.05.30 |
申请人 |
SYMYX TECHNOLOGIES INC;AIR PRODUCTS & CHEMICALS INC |
发明人 |
KIRNER JOHN FRANCIS;MACDOUGALL JAMES EDWARD;PETERSON BRIAN KEITH;WEIGEL SCOTT JEFFREY;DEIS THOMAS ALAN;DEVENNEY MARTIN;RAMBERG C ERIC;CHONDROUDIS KONSTANTINOS;CENDAK KEITH |
分类号 |
H01L21/768;C01B33/16;H01B3/12;H01B3/46;H01L21/312;H01L21/316;H01L23/522;(IPC1-7):H01L21/312 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|