发明名称 LOW-DIELECTRIC-CONSTANT MATERIAL, AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To disclose low-dielectric-constant materials, the improvements of the performances of the films including the same materials, and the manufacturing methods thereof when they are used as interlayer dielectrics in integrated circuits. <P>SOLUTION: These materials are characterized in that their dielectric constants (k) are equal to or smaller than about 3.7, and the standardized wall elastic moduluses (E<SB>0</SB>') are equal to or larger than about 15 GPa which are derived partially from the dielectric constants of the foregoing materials, and their metal-impurity levels are equal to or smaller than 500 ppm. Also, there are given low-dielectric-constant materials having dielectric constants smaller than about 1.95 and having standardized wall elastic moduluses (E<SB>0</SB>') larger than about 26 GPa which are derived partially from the dielectric constants of the foregoing materials. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004134738(A) 申请公布日期 2004.04.30
申请号 JP20030155020 申请日期 2003.05.30
申请人 SYMYX TECHNOLOGIES INC;AIR PRODUCTS & CHEMICALS INC 发明人 KIRNER JOHN FRANCIS;MACDOUGALL JAMES EDWARD;PETERSON BRIAN KEITH;WEIGEL SCOTT JEFFREY;DEIS THOMAS ALAN;DEVENNEY MARTIN;RAMBERG C ERIC;CHONDROUDIS KONSTANTINOS;CENDAK KEITH
分类号 H01L21/768;C01B33/16;H01B3/12;H01B3/46;H01L21/312;H01L21/316;H01L23/522;(IPC1-7):H01L21/312 主分类号 H01L21/768
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