发明名称 TREATMENT EQUIPMENT AND PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent exfoliation of an upper layer film when polishing is performed in a post-treatment. SOLUTION: An almost U-shaped film removing member 80 is arranged in coating treatment equipment. A plasma radiation part 84 is arranged on a ceiling surface inside the film removing member 80, and a suction opening 85 is arranged on a side surface. An outer peripheral part of a wafer W wherein a coating film is formed on a surface is inserted inside the film removing member 80, and a wafer W is rotated. An end portion of an outer peripheral film R on the wafer W is irradiated with a plasma simultaneously with suction from the suction opening 85. The emitted plasma is made to flow to the suction opening 85 side and brought into contact with the end portion of an outer peripheral film R, and the end potion is corroded, so that an inclinated part K is formed on the end portion of the outer peripheral film R. As a result, a hard mask or the like as the upper layer film is formed later, and the hard mask is not exfoliated since no concentrated load is applied to the end portion even if a load is applied to the end portion of the outer peripheral film R by an abrasive pad after formation of the hard mask. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004096086(A) 申请公布日期 2004.03.25
申请号 JP20030190174 申请日期 2003.07.02
申请人 TOKYO ELECTRON LTD 发明人 IWASHITA MITSUAKI;KONISHI NOBUO
分类号 H01L21/3065;H01L21/027;H01L21/304;H01L21/31;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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