| 摘要 |
PROBLEM TO BE SOLVED: To decrease an area occupied by a control block or the like repeatedly used by efficiently arranging a structure of a cell array of a nonvolatile ferroelectric memory device and a core related circuit. SOLUTION: The nonvolatile ferroelectric memory device comprises: a cell array block driver which stores data in a cell array block having the cell array or the like for storing data and in a cell array block, or applies a driving signal for reading the stored data to the cell array block; and a multimetal layer in which cell arrays or the like and a driving signal line on which the driving signal is transferred are formed in layers different from each other. COPYRIGHT: (C)2004,JPO
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