METHOD FOR FORMING SILICIDE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a silicide layer of a semiconductor device is provided to form correctly a silicide region by performing a thermal process for a silicide blocking layer. CONSTITUTION: A gate oxide layer(120) is formed on a semiconductor substrate(100). A gate electrode including polysilicon is formed on the gate oxide layer(120). A source/drain region is formed by performing an ion implantation process. A silicide blocking layer pattern(160a) is formed on the semiconductor substrate(100). The silicide blocking layer pattern(160a) is hardened by performing a thermal process. A natural oxide layer is removed by cleaning the semiconductor substrate(100). A silicide layer is formed on the semiconductor substrate(100).