发明名称
摘要 <p>PROBLEM TO BE SOLVED: To easily and inexpensively provide a thin film photoelectric conversion device having high conversion efficiency with sufficient optical confinement effect. SOLUTION: A photoelectric conversion device contains first electrode layers (3, 4:7, 6), a semiconductor photoelectric conversion layer (5) and a second electrode layers (7, 6:3, (12)), which are stacked on a substrate. A light diffusion layer 2 for diffusing light is installed between the substrate 1 and the first electrode layers (3, 4:7, 6). The light diffusion layer 2 is formed by using resin having a surface texture containing fine projecting/recessing parts fitted for diffusing light and containing fine particles 8 fitted for generating the surface texture.</p>
申请公布号 JP3490909(B2) 申请公布日期 2004.01.26
申请号 JP19980289134 申请日期 1998.10.12
申请人 发明人
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
代理机构 代理人
主权项
地址
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