| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a content-addressable memory (CAM) circuit in which use efficiency of the area of a semiconductor substrate is improved. <P>SOLUTION: This CAM cell has first and second memory circuits and a comparing circuit. The comparing circuit has six transistors formed on two activation regions. Local mutual connection is provided between the first memory circuit formed by poly-silicon regions and the comparing circuit. Local mutual connection is provided between the second memory circuit formed by poly-silicon and conductive regions and the comparing circuit. <P>COPYRIGHT: (C)2004,JPO |
