发明名称 |
Method for forming polysilicon thin film transistor with a self-aligned LDD structure |
摘要 |
A polysilicon thin film transistor with a self-aligned LDD structure has a polysilicon layer formed on a transparent insulating substrate. The polysilicon layer consists of a channel region, an LDD structure on two sides of the channel region, and a source/drain region on two sides of the LDD structure. A gate insulating layer is formed on the polysilicon layer, a first metal layer is patterned on the gate insulating layer to cover the channel region, and a second metal layer is patterned on the first metal layer to cover the channel region.
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申请公布号 |
US6677189(B2) |
申请公布日期 |
2004.01.13 |
申请号 |
US20010008848 |
申请日期 |
2001.11.30 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
DAI YUAN-TUNG;LIAO TSUNG-NENG;CHEN CHIH-CHIANG |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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