发明名称 |
Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM |
摘要 |
A magnetic RAM (MRAM) using a thermo-magnetic spontaneous Hall effect includes a MOS transistor formed on a substrate; a heating means formed above the MOS transistor and connected to a source region of the MOS transistor; a memory layer having a data write area to which data is written, the data write area being formed on the heating means; a bit line formed on the data write area; an upper insulating film formed on the bit line and the memory layer; and a write line formed on the upper insulating film so that a magnetic field necessary for writing data is generated in at least the data write area of the memory layer. The MRAM writes or reads data using the fact that a spontaneous Hall voltage greatly differs according to the magnetization state of a memory layer, thereby providing the device a high data sensing margin.
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申请公布号 |
US2003235072(A1) |
申请公布日期 |
2003.12.25 |
申请号 |
US20030465602 |
申请日期 |
2003.06.20 |
申请人 |
KIM TAE-WAN;KIM KEE-WON;PARK WAN-JUN;SONG I-HUN;PARK SANG-JIN |
发明人 |
KIM TAE-WAN;KIM KEE-WON;PARK WAN-JUN;SONG I-HUN;PARK SANG-JIN |
分类号 |
H01L27/105;G11C11/18;H01L21/8246;H01L43/06;(IPC1-7):G11C11/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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