DMOS TRANSISTOR

摘要

A lateral CMOS-compatible RF-DMOS Transistor (RFLDMOST) with a low "on" resistance, characterized in that a flat doping region (24) in comparison with the penetration depth of the source/drain region (3,5) is arranged in the drift region (20) between the highly doped drain region (5) and the control gate (9), above the low doped drain region (LDDR) (22, 26) of the transistor, said flat doping region being of an opposite conducting type with respect to the LDDR (22, 26) (known as an inversion region) which has a net doping, in relation to the surface, which is less than the net doping of the LDDR (22, 26).