发明名称 |
SUSCEPTOR FOR MOCVD REACTOR |
摘要 |
A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.
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申请公布号 |
WO03098667(A1) |
申请公布日期 |
2003.11.27 |
申请号 |
WO2003US13648 |
申请日期 |
2003.04.30 |
申请人 |
CREE INC. |
发明人 |
NAKAMURA, SHUJI;DENBAARS, STEVEN;BATRES, MAX;COULTER, MICHEAL |
分类号 |
H01L21/683;H01L21/00;H01L21/205;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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