INSULATION LAYER OF SEMICONDUCTOR DEVICE WITH MULTILAYERED NANOLAMINATE STRUCTURE AND FABRICATING METHOD THEREFOR

摘要

PURPOSE: A method for fabricating an insulation layer of a semiconductor device with a multilayered nanolaminate structure and a fabricating method therefor are provided to improve a wet etch characteristic and obtain a low dielectric constant by forming an insulation layer used as a dielectric layer of the semiconductor device such that the insulation layer is made of the multilayered nanolaminate structure in which a SiNx layer and a BN layer are alternatively stacked. CONSTITUTION: A silicon nitride layer(210) is formed on a wafer(100). A boron nitride layer(220) is formed on the silicon nitride layer. The abovementioned processes are alternatively repeated to form a multilayered nanolaminate thin film(200). An atomic layer deposition process is repeatedly performed a predetermined number of times to form the silicon nitride layer and the boron nitride layer.