| 摘要 |
PROBLEM TO BE SOLVED: To reduce variations in working of a movable portion in a manufacturing method of a semiconductor device provided with a laminate consisting of a first semiconductor layer and a second semiconductor layer laminated thereon through an insulating layer, and a movable section formed on the second semiconductor layer and being displaceable in response to application of dynamic quantity. SOLUTION: In this method, in a trench forming process shown in (b) and (c), even if an etching time until a narrowest trench 14 reaches an oxide film 13 is set to a time of the entire etching, a notch phenomenon in which the bottom in a wide trench 14 is side etched can be prevented, since the etching is performed in the trench forming process under an etching condition of preventing charging of the film 13. Thus, in the portion 20, since the variations in a trench angle and a distance between the film 13 can be prevented and uniform spring properties can be obtained, stable sensor characteristics can be exhibited. COPYRIGHT: (C)2003,JPO |
