发明名称 |
Thermal low k dielectrics |
摘要 |
An integrated circuit having an electrically insulating layer of an electrically nonconductive material, where the electrically insulating layer is disposed between at least two electrically conductive elements. The electrically nonconductive material is selected from a group of materials having a k value that decreases when subjected to thermal treatment. The electrically nonconductive material is most preferably a boro siloxane.
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申请公布号 |
US2003170973(A1) |
申请公布日期 |
2003.09.11 |
申请号 |
US20020094520 |
申请日期 |
2002.03.08 |
申请人 |
MAY CHARLES E.;ALLMAN DERRYL D.J. |
发明人 |
MAY CHARLES E.;ALLMAN DERRYL D.J. |
分类号 |
H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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