发明名称 SEMICONDUCTOR LASER DIODE HAVING METAL MIRROR
摘要 PURPOSE: A semiconductor laser diode having a metal mirror is provided to enhance the output of the laser beam by using the metal mirror to increase the reflectivity. CONSTITUTION: A semiconductor laser diode includes an upper p-metal layer(16) and a lower n-metal layer(17) to radiate a laser beam. An Hr coating layer(30) is formed on an opposite side to an output side of the laser beam of the semiconductor laser diode. A metal mirror(50) is formed on an outer side of the Hr coating layer. An Ar coating layer(31) is formed on the laser beam output side. The metal mirror is formed by extending the p-metal layer to surround the Hr coating layer. The metal layer is formed with Au. The thickness of the metal mirror is about 100 to 1000 angstrom.
申请公布号 KR20030066952(A) 申请公布日期 2003.08.14
申请号 KR20020006726 申请日期 2002.02.06
申请人 LG ELECTRONICS INC. 发明人 JANG, YEONG HAK;KIM, CHEOL HOE
分类号 H01S5/30;(IPC1-7):H01S5/30 主分类号 H01S5/30
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