HALOGEN-RESISTANT, ANODIZED ALUMINUM FOR USE IN SEMICONDUCTOR PROCESSING APPARATUS

摘要

We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities and compounds thereof by heat-treating the aluminum alloy at a temperature less than about 330 °C and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.