发明名称 BOOSTER CIRCUIT OF NON-VOLATILE SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a booster circuit of a non-volatile semiconductor device which can abridge initial stage accessible time at power on time or power reset time. <P>SOLUTION: A driving control circuit 266 is made to input a power supply on/reset signals, ON/RS from the outside. At power on time or power reset time, even in a standby mode, not a weak charge pump 264, but a strong charge pump 262 having a large capacity of available current supply is driven based on ON/RS signals, and the booster voltage HV is quickly pressure up from 0 V to the standby voltage. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003223794(A) 申请公布日期 2003.08.08
申请号 JP20020016046 申请日期 2002.01.24
申请人 SEIKO EPSON CORP 发明人 NATORI KANJI
分类号 G11C16/06;G11C5/14;G11C7/00;G11C16/30;H01L27/115;H01L31/0328;H02M3/07;(IPC1-7):G11C16/06 主分类号 G11C16/06
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