发明名称 Semiconductor device and method for manufacturing the same
摘要 An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
申请公布号 US9443874(B2) 申请公布日期 2016.09.13
申请号 US201414320742 申请日期 2014.07.01
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Miyanaga Akiharu;Sakata Junichiro;Sakakura Masayuki;Takahashi Masahiro;Kishida Hideyuki;Yamazaki Shunpei
分类号 H01L29/12;H01L27/12;H01L29/786;H01L29/45;H01L27/32 主分类号 H01L29/12
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. An e-book reader comprising: a housing; and a display portion comprising: a flexible substrate;a gate electrode and an oxide semiconductor film over the flexible substrate, the gate electrode and the oxide semiconductor film overlapping each other with a gate insulating film therebetween;a metal oxide film in contact with a first region of the oxide semiconductor film, the metal oxide film and a second region of the oxide semiconductor film overlapping each other with the first region of the oxide semiconductor film therebetween; anda conductive film in contact with the metal oxide film, the conductive film comprising a metal element, wherein a resistance of the first region of the oxide semiconductor film is lower than a resistance of the second region of the oxide semiconductor film, wherein each of the first region of the oxide semiconductor film and the second region of the oxide semiconductor film comprises In, Ga, Zn, and O, and wherein a concentration of In in the first region of the oxide semiconductor film is higher than a concentration of In in the second region of the oxide semiconductor film.
地址 Atsugi-shi, Kanagawa-ken JP