Semiconductor apparatus having contacts of multiple heights and method of making same

摘要

A semiconductor apparatus and method are provided. According to an embodiment, the apparatus includes a first contact extending from a first conductive element disposed in a substrate. A second contact extends from a second conductive element disposed in the substrate at least to a lower limit of a capacitor well. The capacitor well is formed in a pre-metal dielectric layer disposed on the substrate. The second contact is shorter than the first contact. The height of the capacitor structure may be substantially the same as the height of the pre-metal dielectric layer. A first metal layer is disposed on the pre-metal dielectric layer. Thus, the capacitor structure may extend from the lower limit of the capacitor well to the first metal layer. The first contact extends to the first metal layer.