| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a mask which is thin and fine and has extremely high resolution and high heat resistance and dry etching resistance. <P>SOLUTION: When the mask comprising a resist layer is formed on the film to be patterned, a layered resist pattern containing a lower layer resist pattern 111 and an upper layer resist pattern 112 is formed on the film 102 to be patterned. Then the surface of the upper layer resist pattern 112 is sililated by sililation. <P>COPYRIGHT: (C)2003,JPO |
